6970 Mosfet

FDD16AN08_F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FDD16AN08_F085

Тип транзистора: MOSFET

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Полярность: N

Максимальная рассеиваемая мощность (Pd): 135 W

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled. Sparesale Com - Offering Generic Black MOSFET AON 7752 7934 6970 6780 1448 7410 6426 7506 7400 7403 6372 at Rs 109/piece in Pune, Maharashtra. Read about company. Get contact details and address.

Предельно допустимое напряжение сток-исток |Uds|: 75 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 50 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 31 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm

Тип корпуса: TO252

FDD16AN08_F085 Datasheet (PDF)

0.1. fdd16an08a0 f085 fdd16an08 f085.pdf Size:2944K _fairchild_semi

October 2008FDD16AN08A0_F085N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capabil

5.1. fdd16an08a0.pdf Size:242K _fairchild_semi

May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing

6970 Mosfet Wiring

5.2. fdd16an08a0 nf054.pdf Size:239K _fairchild_semi

Другие MOSFET... FDH50N50, FQPF6N90C, FQPF70N10, FDH45N50F, FQPF7N60, FDN5632N_F085, FQPF7N65C, FQPF7N80C, BUZ10, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06L_F085, FQPF8N60CF, FDMS7680, FQPF8N80C, FQD5N15.

Список транзисторов

Обновления

Type Designator: AON6970

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 31(78) W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.3 V

Maximum Drain Current |Id|: 58(85) A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15.5(16) nS

Drain-Source Capacitance (Cd): 284(1100) pF

Maximum Drain-Source On-State Resistance (Rds): 0.0054(0.0015) Ohm

Package: DFN5X6D

AON6970 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON6970 Datasheet (PDF)

0.1. aon6970.pdf Size:529K _aosemi

6970 Mosfet Pdf

AON697030V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGSVDS 30V 30V Low Gate Charge ID (at VGS=10V) 58A 85A High Current Capability RDS(ON) (at VGS=10V)

8.1. aon6978.pdf Size:476K _aosemi

AON697830V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

8.2. aon6973a.pdf Size:482K _aosemi

AON6973A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

8.3. aon6974.pdf Size:648K _aosemi

AON697430V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 36A Low Gate Charge RDS(ON) (at VGS=10V)

8.4. aon6974a.pdf Size:482K _aosemi

AON6974A30V Dual Asymmetric N-Channel AlphaMOSGeneral Description Product SummaryQ1 Q2 Latest Trench Power AlphaMOS (MOS LV) technology Integrated Schottky Diode (SRFET) on Low-SideVDS 30V 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 28A 32A Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AON6924, AON6926, AON6928, AON6932A, AON6934A, AON6936, AON6938, AON6946, IRF840, AON6973A, AON6974A, AON6978, AON6980, AON7200, AON7210, AON7220, AON7240.

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